The WSD20L70DN is a high performance 20V 70A P-channel MOSFET with very high cell density that provides excellent RDSON and gate charge for most synchronous buck converter applications.

Product parameter:

Type Designator: WSD20L70DN

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 70 nC

Rise Time (tr): 52 nS

Drain-Source Capacitance (Cd): 927 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0079 Ohm

Package: DFN3X3-8