NCE65T130F N-Channel Power MOSFET NCE65T130F devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. Drain-Source Voltage 650V, using TO-220F package.
This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is more guaranteed; welcome to buy!
Features:
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra-low gate charge causes lower driving requirements
Application:
Power factor correction (PFC)
Switched mode power supplies (SMPS)
Uninterruptible Power Supply (UPS)

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